TY - JOUR
KW - Thin films
KW - Silicon
KW - Computer simulation
KW - Piezoelectricity
KW - Heterojunctions
KW - Lead compounds
KW - Comminution
KW - Domain movement
KW - Ion beam milling
KW - Piezoelectric responses
KW - Polydomain structures
KW - Finite element method
AU - Z Ma
AU - F Zavaliche
AU - L Chen
AU - J Ouyang
AU - J Melngailis
AU - A.L Roytburd
AU - V Vaithyanathan
AU - D.G Schlom
AU - T Zhao
AU - Ramamoorthy Ramesh
AB - The converse longitudinal piezoelectric responses of PbZr0.2 Ti0.8 O3 SrTiO3 Si heterostructures have been studied for continuous films and for islands patterned by focused ion beam milling (typical dimension is 1×1×1 μm). The intrinsic piezoelectric response of the island with an immobile polydomain structure is modeled using finite element analysis. The difference between the results of experimental measurement and modeling is explained by an extrinsic contribution to the piezoresponse from 90° domain movement. The contribution of 90° domain movement to the total piezoresponse is shown to be greatly enhanced in the patterned islands, and leads to an effective piezoelectric coefficient (∼400 pmV) which is five times larger than the theoretical bulk single domain value. © 2005 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2012527
LA - eng
M1 - 7
N1 - cited By 24
N2 - The converse longitudinal piezoelectric responses of PbZr0.2 Ti0.8 O3 SrTiO3 Si heterostructures have been studied for continuous films and for islands patterned by focused ion beam milling (typical dimension is 1×1×1 μm). The intrinsic piezoelectric response of the island with an immobile polydomain structure is modeled using finite element analysis. The difference between the results of experimental measurement and modeling is explained by an extrinsic contribution to the piezoresponse from 90° domain movement. The contribution of 90° domain movement to the total piezoresponse is shown to be greatly enhanced in the patterned islands, and leads to an effective piezoelectric coefficient (∼400 pmV) which is five times larger than the theoretical bulk single domain value. © 2005 American Institute of Physics.
PY - 2005
T2 - Applied Physics Letters
TI - Effect of 90° domain movement on the piezoelectric response of patterned PbZr 0.2 Ti 0.8 O 3 SrTiO 3 Si heterostructures
VL - 87
SN - 00036951
ER -