TY - JOUR
KW - Substrates
KW - Strontium compounds
KW - Lead compounds
KW - Piezoelectric materials
KW - Piezoelectric properties
KW - Epitaxial PZT films
KW - Substrate constraints
AU - D.M Kim
AU - C.B Eom
AU - V Nagarajan
AU - J Ouyang
AU - Ramamoorthy Ramesh
AU - V Vaithyanathan
AU - D.G Schlom
AB - We report the structural and longitudinal piezoelectric responses (d 33) of epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) films on (001) SrTiO 3 and Si substrates in the thickness range of 40 nm-4 μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d 33 values of PZT films on Si substrates (∼330 pmV) are higher than those on SrTiO 3 substrates (∼200 pmV). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices. © 2006 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2185614
LA - eng
M1 - 14
N1 - cited By 103
N2 - We report the structural and longitudinal piezoelectric responses (d 33) of epitaxial Pb(Zr 0.52Ti 0.48)O 3 (PZT) films on (001) SrTiO 3 and Si substrates in the thickness range of 40 nm-4 μm. With increasing film thickness the tetragonality of PZT was reduced. The increase in d33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d 33 values of PZT films on Si substrates (∼330 pmV) are higher than those on SrTiO 3 substrates (∼200 pmV). The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices. © 2006 American Institute of Physics.
PY - 2006
T2 - Applied Physics Letters
TI - Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr 0.52Ti 0.48)O 3 films on Si and SrTiO 3 substrates
VL - 88
SN - 00036951
ER -