TY - JOUR
KW - Thin films
KW - Pulsed laser deposition
KW - Electrodes
KW - Epitaxial growth
KW - Ferroelectricity
KW - Semiconducting bismuth compounds
KW - Leakage currents
KW - Asymmetric structure
KW - Ionization energies
KW - Poole-Frenkel emission
AU - G.W Pabst
AU - L.W Martin
AU - Y.-H Chu
AU - Ramamoorthy Ramesh
AB - The authors report results of transport studies on high quality, fully epitaxial BiFe O3 thin films grown via pulsed laser deposition on SrRu O3 DySc O3 (110) substrates. Ferroelectric tests were conducted using symmetric and asymmetric device structures with either SrRu O3 or Pt top electrodes and SrRu O3 bottom electrodes. Comparison between these structures demonstrates the influence of electrode selection on the dominant transport mechanism. Analysis of film electrical response suggests Poole-Frenkel emission as the limiting leakage current mechanism in the symmetric structure. Temperature dependent measurements yield trap ionization energies of ∼0.65-0.8 eV. No clear dominant leakage mechanism was observed for the asymmetric structure. © 2007 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2535663
LA - eng
M1 - 7
N1 - cited By 419
N2 - The authors report results of transport studies on high quality, fully epitaxial BiFe O3 thin films grown via pulsed laser deposition on SrRu O3 DySc O3 (110) substrates. Ferroelectric tests were conducted using symmetric and asymmetric device structures with either SrRu O3 or Pt top electrodes and SrRu O3 bottom electrodes. Comparison between these structures demonstrates the influence of electrode selection on the dominant transport mechanism. Analysis of film electrical response suggests Poole-Frenkel emission as the limiting leakage current mechanism in the symmetric structure. Temperature dependent measurements yield trap ionization energies of ∼0.65-0.8 eV. No clear dominant leakage mechanism was observed for the asymmetric structure. © 2007 American Institute of Physics.
PY - 2007
T2 - Applied Physics Letters
TI - Leakage mechanisms in BiFe O3 thin films
VL - 90
SN - 00036951
ER -