TY - JOUR
KW - Thin films
KW - Annealing
KW - Electrochemical electrodes
KW - Film growth
KW - Bismuth compounds
KW - Ferroelectricity
KW - Piezoelectric materials
KW - Ferroelectric properties
KW - Synthesis (chemical)
KW - Piezoelectric properties
KW - Piezoresponse force microscopy (PFM)
KW - Polymeric precursor method
AU - A.Z Simões
AU - M.P Cruz
AU - A Ries
AU - E Longo
AU - J.A Varela
AU - Ramamoorthy Ramesh
AB - Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 °C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d33, regardless of bottom electrode is around (∼40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 μC/cm2), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. © 2006 Elsevier Ltd. All rights reserved.
BT - Materials Research Bulletin
DO - 10.1016/j.materresbull.2006.08.006
LA - eng
M1 - 5
N1 - cited By 17
N2 - Bismuth titanate (Bi4Ti3O12, BIT) films were evaluated for use as lead-free piezoelectric thin films in micro-electromechanical systems. The films were grown by the polymeric precursor method on LaNiO3/SiO2/Si (1 0 0) (LNO), RuO2/SiO2/Si (1 0 0) (RuO2) and Pt/Ti/SiO2/Si (1 0 0) (Pt) bottom electrodes in a microwave furnace at 700 °C for 10 min. The domain structure was investigated by piezoresponse force microscopy (PFM). Although the converse piezoelectric coefficient, d33, regardless of bottom electrode is around (∼40 pm/V), those over RuO2 and LNO exhibit better ferroelectric properties, higher remanent polarization (15 and 10 μC/cm2), lower drive voltages (2.6 and 1.3 V) and are fatigue-free. The experimental results demonstrated that the combination of the polymeric precursor method assisted with a microwave furnace is a promising technique to obtain films with good qualities for applications in ferroelectric and piezoelectric devices. © 2006 Elsevier Ltd. All rights reserved.
PY - 2007
SP - 975
EP - 981
T2 - Materials Research Bulletin
TI - Ferroelectric and piezoelectric properties of bismuth titanate thin films grown on different bottom electrodes by soft chemical solution and microwave annealing
VL - 42
SN - 00255408
ER -