TY - JOUR
KW - Thin films
KW - Bismuth compounds
KW - Charge transfer
KW - Cooling pressure
KW - Dark conductivities
KW - Photoconductivity
KW - Thermal effects
AU - S.R Basu
AU - L.W Martin
AU - Y.H Chu
AU - M Gajek
AU - Ramamoorthy Ramesh
AU - R.C Rai
AU - X Xu
AU - J.L Musfeldt
AB - The optical properties of epitaxial BiFe O3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667±0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFe O3 films under illumination from a 100 mW cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light. © 2008 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2887908
LA - eng
M1 - 9
N1 - cited By 370
N2 - The optical properties of epitaxial BiFe O3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667±0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFe O3 films under illumination from a 100 mW cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light. © 2008 American Institute of Physics.
PY - 2008
T2 - Applied Physics Letters
TI - Photoconductivity in BiFeO3 thin films
VL - 92
SN - 00036951
ER -