TY - JOUR
KW - Silicon compounds
KW - Lanthanum compounds
KW - Bismuth compounds
KW - Permittivity
KW - Epitaxial films
KW - Hysteresis loops
KW - Substitution reactions
KW - Coercive voltage
KW - Control domain structure
KW - Rhombohedral distortion
AU - Y.H Chu
AU - Q Zhan
AU - C.-H Yang
AU - M.P Cruz
AU - L.W Martin
AU - T Zhao
AU - P Yu
AU - Ramamoorthy Ramesh
AU - P.T Joseph
AU - I.N Lin
AU - W Tian
AU - D.G Schlom
AB - We have probed the role of La substitution on the ferroelectric properties of epitaxial BiFe O3 films on SrTi O3 -templated Si. This provides a mechanism to engineer the rhombohedral distortion in the crystal and, thus, control domain structure and switching. With a 10% La substitution, the (Bi0.9 La0.1) Fe O3 film showed well-saturated ferroelectric hysteresis loops with a remanent polarization of 45 μC cm2, a converse piezoelectric coefficient d33 of 45 pmV, and a dielectric constant of 140. Over this range of La substitution, the coercive field systematically decreases such that a coercive voltage of 1 V can been obtained in a 100 nm thick film. These results show promise for the ultimate implementation of this lead-free multiferroic operating at voltages in the range of 2-3 V. © 2008 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2897304
LA - eng
M1 - 10
N1 - cited By 79
N2 - We have probed the role of La substitution on the ferroelectric properties of epitaxial BiFe O3 films on SrTi O3 -templated Si. This provides a mechanism to engineer the rhombohedral distortion in the crystal and, thus, control domain structure and switching. With a 10% La substitution, the (Bi0.9 La0.1) Fe O3 film showed well-saturated ferroelectric hysteresis loops with a remanent polarization of 45 μC cm2, a converse piezoelectric coefficient d33 of 45 pmV, and a dielectric constant of 140. Over this range of La substitution, the coercive field systematically decreases such that a coercive voltage of 1 V can been obtained in a 100 nm thick film. These results show promise for the ultimate implementation of this lead-free multiferroic operating at voltages in the range of 2-3 V. © 2008 American Institute of Physics.
PY - 2008
T2 - Applied Physics Letters
TI - Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution
VL - 92
SN - 00036951
ER -