TY - JOUR
KW - Crystal orientation
KW - Ferroelectric materials
KW - Computer simulation
KW - Bismuth compounds
KW - Epitaxial films
KW - Film orientations
KW - Constraint theory
KW - Coulomb interactions
KW - Ferroelectric domain structures
AU - J.X Zhang
AU - Y.L Li
AU - S Choudhury
AU - L.Q Chen
AU - Y.H Chu
AU - F Zavaliche
AU - M.P Cruz
AU - Ramamoorthy Ramesh
AU - Q.X Jia
AB - Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the 110c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed. © 2008 American Institute of Physics.
BT - Journal of Applied Physics
DO - 10.1063/1.2927385
LA - eng
M1 - 9
N1 - cited By 56
N2 - Ferroelectric domain structures of (001)c, (101)c, and (111)c oriented epitaxial BiFe O3 thin films were studied by using the phase-field approach. Long-range elastic and electrostatic interactions were taken into account. The effects of various types of substrate constraint on the domain morphologies were systematically analyzed. It is demonstrated that domain structures of BiFe O3 thin films could be controlled by selecting proper film orientations and substrate constraint. The dependence of the 110c -type domain wall orientation on substrate constraint for the (001)c oriented BiFe O3 thin film was also discussed. © 2008 American Institute of Physics.
PY - 2008
T2 - Journal of Applied Physics
TI - Computer simulation of ferroelectric domain structures in epitaxial BiFe O3 thin films
VL - 103
SN - 00218979
ER -