TY - JOUR
KW - Crystal growth
KW - Ferroelectric materials
KW - Multiferroic
KW - Ferroelectricity
KW - Bismuth ferrite
KW - Bismuth
KW - Ferroelectric domain walls
KW - Semiconducting bismuth compounds
KW - Bicrystal grain boundary
KW - Tilt grain boundary
KW - Grain boundaries
KW - Grain size and shape
KW - Ferroelectric polarization switching
AU - B.J Rodriguez
AU - Y.H Chu
AU - Ramamoorthy Ramesh
AU - S.V Kalinin
AB - The ferroelectric polarization switching behavior at the 24° (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB. © 2008 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.2993327
LA - eng
M1 - 14
N1 - cited By 44
N2 - The ferroelectric polarization switching behavior at the 24° (100) tilt grain boundary (GB) in an epitaxial multiferroic BiFeO3 bicrystal film is studied using piezoresponse force microscopy (PFM). The PFM amplitudes across positively and negatively poled GB regions suggest the presence of a frozen polarization component at the interface. The switching experiments demonstrate that the GB attracts the domain wall and acts as a pinning center. The PFM results are compared with conductive atomic force microscopy and spectroscopy, which suggest domain wall pinning at the GB can be partially attributed to increased conductance at the GB. © 2008 American Institute of Physics.
PY - 2008
T2 - Applied Physics Letters
TI - Ferroelectric domain wall pinning at a bicrystal grain boundary in bismuth ferrite
VL - 93
SN - 00036951
ER -