TY - CPAPER
KW - Thin films
KW - Films
KW - Polarization
KW - Ferroelectric materials
KW - Switching behaviors
KW - Ferroelectric films
KW - Coercive force
KW - Magnetic properties
KW - Spontaneous polarizations
KW - Magnetoelectric devices
KW - Epitaxial films
KW - Semiconducting bismuth compounds
KW - Ferroelectric properties
KW - Coercive fields
KW - Promising materials
KW - Remanent polarizations
KW - Strain dependences
KW - Tunabilities
KW - Volatile memories
AU - H.W Jang
AU - S.H Baek
AU - D Ortiz
AU - C.M Folkman
AU - R.R Das
AU - Y.H Chu
AU - J.X Zhang
AU - V Vaithyanathan
AU - S Choudhury
AU - Y.B Chen
AU - X.Q Pan
AU - D.G Schlom
AU - L.Q Chen
AU - Ramamoorthy Ramesh
AU - C.B Eom
AB - We report the strain dependence of remanent polarization and coercive field of epitaxial (001)p BiFeO3 films. Our measurements reveal that the large spontanoues polarization of BiFeO3 is indeed intrinsic, the remanent polarization of (001)pBiFeO3 thin films has a strong strain dependence, even stronger than (001) PbTiO3 films, and the coercive field of BiFeO3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO3 membranes allows us to achieve a fatigue-free switching behavior to 1010 cycles. This experimental result strongly suggests that epitaxial (001)p BiFeO3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.
BT - IEEE International Symposium on Applications of Ferroelectrics
DO - 10.1109/ISAF.2008.4693773
LA - eng
N1 - cited By 0
N2 - We report the strain dependence of remanent polarization and coercive field of epitaxial (001)p BiFeO3 films. Our measurements reveal that the large spontanoues polarization of BiFeO3 is indeed intrinsic, the remanent polarization of (001)pBiFeO3 thin films has a strong strain dependence, even stronger than (001) PbTiO3 films, and the coercive field of BiFeO3 films is also tunable. In addition, the low coercive filed and the reduced leakage current in (001) p BiFeO3 membranes allows us to achieve a fatigue-free switching behavior to 1010 cycles. This experimental result strongly suggests that epitaxial (001)p BiFeO3 thin films are very promising materials for non-volatile memories and magnetoelectric devices.
PY - 2008
SN - 1424427444; 9781424427444
T2 - IEEE International Symposium on Applications of Ferroelectrics
T3 - IEEE International Symposium on Applications of Ferroelectrics
TI - Strain tunability of spontaneous polarization and enhanced ferroelectric properties in epitaxial (001) BiFeO3 thin films
VL - 3
ER -