TY - CPAPER
KW - Adsorption
KW - Thin films
KW - Molecular beam epitaxy
KW - Stoichiometry
KW - Bismuth oxides
KW - Crystal growth
KW - Vapor pressure
KW - Semiconductor growth
KW - Semiconductor materials
KW - Ferroelectric materials
KW - Epitaxial growth
KW - Energy gap
KW - Single crystals
KW - Bismuth
KW - Electric conductivity
KW - Epitaxial films
KW - Semiconducting bismuth compounds
KW - Growth (materials)
KW - Semiconducting silicon compounds
KW - Gallium alloys
KW - Crystals
KW - Epitaxial layers
KW - Gallium nitride
KW - Hydrostatic pressure
KW - Metallorganic vapor phase epitaxy
KW - Semiconducting gallium
KW - Silicon carbide
KW - Algan/gan
KW - Controlled growths
KW - Differential vapor pressures
KW - Hemt structures
KW - Molecular-beam epitaxies
KW - Plane orientations
KW - Plane rotations
KW - Rocking curves
KW - Semi-conductors
KW - SiC single crystals
KW - Wide bands
KW - X-ray Diffraction
AU - J.F Ihlefeld
AU - W Tian
AU - Z.K Liu
AU - W.A Doolittle
AU - M Bernhagen
AU - P Reiche
AU - R Uecker
AU - Ramamoorthy Ramesh
AU - D.G Schlom
AB - BiFeO3 thin films have been deposited on (101) DyScO 3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002°). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [112̄0] BiFeO3 || [112̄0] GaN (SiC) plus a twin variant related by a 180° in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.
BT - IEEE International Symposium on Applications of Ferroelectrics
DO - 10.1109/ISAF.2008.4693774
LA - eng
N1 - cited By 1
N2 - BiFeO3 thin films have been deposited on (101) DyScO 3, (0001) AlGaN/GaN, and (0001) SiC single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth over-pressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with rocking curve full width at half maximum values as narrow as 7.2 arc seconds (0.002°). Epitaxial growth of (0001)-oriented BiFeO3 thin films on (0001) GaN, including AlGaN HEMT structures, and (0001) SiC has been realized utilizing intervening epitaxial (111) SrTiO3 / (100) TiO2 buffer layers. The epitaxial BiFeO3 thin films have two in-plane orientations: [112̄0] BiFeO3 || [112̄0] GaN (SiC) plus a twin variant related by a 180° in-plane rotation. This epitaxial integration of the ferroelectric with the highest known polarization, BiFeO3, with wide band gap semiconductors is an important step toward novel field-effect devices.
PY - 2008
SN - 1424427444; 9781424427444
T2 - IEEE International Symposium on Applications of Ferroelectrics
T3 - IEEE International Symposium on Applications of Ferroelectrics
TI - Adsorption-controlled growth of BiFeO3 by MBE and integration with wide band gap semiconductors
VL - 3
ER -