TY - JOUR
KW - Stoichiometry
KW - Magnetic fields
KW - Applied magnetic fields
KW - Gallium alloys
KW - Epitaxial strains
KW - Focused Ion Beam etchings
KW - Heusler
KW - Magnetic controls
KW - Martensite transitions
KW - Phase transformation behaviors
KW - Shape memory compounds
KW - Sputtered films
KW - Twin boundaries
KW - Twin morphologies
KW - Twin structures
KW - Twinning structures
KW - Magnetic thin films
AU - C.A Jenkins
AU - Ramamoorthy Ramesh
AU - M Huth
AU - T Eichhorn
AU - P Pörsch
AU - H.J Elmers
AU - G Jakob
AB - Twin structure engineering in sputtered films close to the Heusler stoichiometry Ni2 MnGa (001) is used to demonstrate temperature and magnetic control of the phase transformation behavior. A custom heating apparatus integrated with a commercial microscope allows the observation of the austenite-martensite transition in epitaxially clamped films. Intermartensitic twin boundaries on cantilevers released from the epitaxial strain by focused ion beam etching are shown to move in response to an applied magnetic field with a strength of 0.6 T. We also report the observation of two coexisting twin morphologies. © 2008 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.3044473
LA - eng
M1 - 23
N1 - cited By 31
N2 - Twin structure engineering in sputtered films close to the Heusler stoichiometry Ni2 MnGa (001) is used to demonstrate temperature and magnetic control of the phase transformation behavior. A custom heating apparatus integrated with a commercial microscope allows the observation of the austenite-martensite transition in epitaxially clamped films. Intermartensitic twin boundaries on cantilevers released from the epitaxial strain by focused ion beam etching are shown to move in response to an applied magnetic field with a strength of 0.6 T. We also report the observation of two coexisting twin morphologies. © 2008 American Institute of Physics.
PY - 2008
T2 - Applied Physics Letters
TI - Growth and magnetic control of twinning structure in thin films of Heusler shape memory compound Ni2 MnGa
VL - 93
SN - 00036951
ER -