TY - JOUR
KW - Stoichiometry
KW - Spatial distribution
KW - Electronic states
KW - Electronic structure
KW - Band gaps
KW - Growth conditions
KW - Semiconducting bismuth compounds
KW - Cathodoluminescence spectroscopy
KW - Defect emission
KW - Defect state
KW - Depth-resolved
KW - Film properties
KW - Interface electronics
KW - Localized electronic state
KW - Near-band edge emissions
AU - J Zhang
AU - M Rutkowski
AU - L.W Martin
AU - T Conry
AU - Ramamoorthy Ramesh
AU - J.F Ihlefeld
AU - A Melville
AU - D.G Schlom
AU - L.J Brillson
AB - The authors report on the depth-resolved cathodoluminescence spectroscopy studies of the surface, bulk, and interface-localized electronic states in the band gap of epitaxial BiFeO3 thin films. The BiFeO3 films show a near band edge emission at 2.7 eV and defect emissions at energies varying from 2.0 to 2.5 eV. The overall results clearly suggest that the electronic structure, especially the defect states and their spatial distributions, of BiFeO3 films are strongly dependent on the growth conditions and method, stoichiometry, and strain, so that understanding and controlling them are crucial to optimize BiFeO3 film properties. © 2009 American Vacuum Society.
BT - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
DO - 10.1116/1.3130152
LA - eng
M1 - 4
N1 - cited By 15
N2 - The authors report on the depth-resolved cathodoluminescence spectroscopy studies of the surface, bulk, and interface-localized electronic states in the band gap of epitaxial BiFeO3 thin films. The BiFeO3 films show a near band edge emission at 2.7 eV and defect emissions at energies varying from 2.0 to 2.5 eV. The overall results clearly suggest that the electronic structure, especially the defect states and their spatial distributions, of BiFeO3 films are strongly dependent on the growth conditions and method, stoichiometry, and strain, so that understanding and controlling them are crucial to optimize BiFeO3 film properties. © 2009 American Vacuum Society.
PY - 2009
SP - 2012
EP - 2014
T2 - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
TI - Surface, bulk, and interface electronic states of epitaxial BiFeO 3 films
VL - 27
SN - 10711023
ER -