TY - JOUR
KW - Electric potential
KW - Indium
KW - Tin
KW - Ferroelectricity
KW - Ferroelectric polarization
KW - Oxide heterostructures
KW - Photovoltaic effects
KW - Semiconducting bismuth compounds
KW - Band offsets
KW - External quantum efficiency
KW - Maximum Efficiency
KW - Open-circuit voltages
KW - Order of magnitude
KW - Tin doped indium oxide
KW - Semiconducting indium compounds
AU - S.Y Yang
AU - L.W Martin
AU - S.J Byrnes
AU - T.E Conry
AU - S.R Basu
AU - D Paran
AU - L Reichertz
AU - J Ihlefeld
AU - C Adamo
AU - A Melville
AU - Y.-H Chu
AU - C.-H Yang
AU - J.L Musfeldt
AU - D.G Schlom
AU - Joel W Ager
AU - Ramamoorthy Ramesh
AB - We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.3204695
LA - eng
M1 - 6
N1 - cited By 404
N2 - We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3 /tin doped indium oxide interface. © 2009 American Institute of Physics.
PY - 2009
T2 - Applied Physics Letters
TI - Photovoltaic effects in BiFeO3
VL - 95
SN - 00036951
ER -