TY - JOUR
KW - Pulsed laser deposition
KW - Electrical resistivity
KW - Lasers
KW - Perovskite
KW - Substrates
KW - Laser deposition
KW - Film growth
KW - Single crystals
KW - Thin film devices
KW - Strontium
KW - Strontium compounds
KW - Strontium alloys
KW - Strontium titanate
KW - Secondary emission
KW - Secondary ion mass spectrometry
KW - Electric conductivity
KW - SrTiO
KW - In situ characterization
KW - Back-gate
KW - Crystal substrates
KW - Functional oxides
KW - Generic method
KW - Secondary ion mass spectroscopy
KW - Substrate resistance
KW - Thermodynamic conditions
KW - Thin film material
KW - Mass spectrometers
KW - Programmable logic controllers
AU - M.L Scullin
AU - J Ravichandran
AU - C Yu
AU - M Huijben
AU - J Seidel
AU - A Majumdar
AU - Ramamoorthy Ramesh
AB - We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10-7 torr, 10-60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices. © 2009 Acta Materialia Inc.
BT - Acta Materialia
DO - 10.1016/j.actamat.2009.09.024
LA - eng
M1 - 2
N1 - cited By 56
N2 - We report a generic method for fast and efficient reduction of strontium titanate (SrTiO3, STO) single crystals by pulsed laser deposition (PLD) of thin-films. The reduction was largely independent of the thin-film material deposited on the crystals. It is shown that thermodynamic conditions (450 °C, 10-7 torr, 10-60 min), which normally reduce STO (0 0 1) substrates to roughly 5 nm into a crystal substrate, can reduce the same crystals throughout their 500 μm thickness when coupled with the PLD. In situ characterization of the STO substrate resistance during thin-film growth is presented. This process opens up the possibility of employing STO substrates as a back-gate in functional oxide devices. © 2009 Acta Materialia Inc.
PY - 2010
SP - 457
EP - 463
T2 - Acta Materialia
TI - Pulsed laser deposition-induced reduction of SrTiO3 crystals
VL - 58
SN - 13596454
ER -