TY - JOUR
AU - J Ravichandran
AU - W Siemons
AU - D.-W Oh
AU - J.T Kardel
AU - A Chari
AU - H Heijmerikx
AU - M.L Scullin
AU - A Majumdar
AU - Ramamoorthy Ramesh
AU - D.G Cahill
AB - SrTiO3 is a promising n -type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO3 doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition. The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La-doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit (ZT) was measured to be 0.28 at 873 K at a carrier concentration of 2.5× 1021 cm-3. © 2010 The American Physical Society.
BT - Physical Review B - Condensed Matter and Materials Physics
DO - 10.1103/PhysRevB.82.165126
LA - eng
M1 - 16
N1 - cited By 46
N2 - SrTiO3 is a promising n -type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO3 doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition. The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La-doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit (ZT) was measured to be 0.28 at 873 K at a carrier concentration of 2.5× 1021 cm-3. © 2010 The American Physical Society.
PY - 2010
T2 - Physical Review B - Condensed Matter and Materials Physics
TI - High-temperature thermoelectric response of double-doped SrTiO3 epitaxial films
VL - 82
SN - 10980121
ER -