TY - JOUR
KW - Pulsed laser deposition
KW - Molecular beam epitaxy
KW - Thermal conductivity
KW - Epitaxial growth
KW - Single crystals
KW - Temperature range
KW - Strontium titanates
KW - Strontium alloys
KW - Crystalline materials
KW - SrTiO
KW - Bulk single crystals
KW - Crystalline quality
KW - Growth conditions
KW - Growth techniques
KW - Homeopitaxial layers
KW - Target materials
KW - Time domain thermoreflectance
KW - Diffractive optics
KW - Molecular beams
KW - Point defects
KW - Surface defects
KW - Time domain analysis
AU - D.-W Oh
AU - J Ravichandran
AU - C.-W Liang
AU - W Siemons
AU - B Jalan
AU - C.M Brooks
AU - M Huijben
AU - D.G Schlom
AU - S Stemmer
AU - L.W Martin
AU - A Majumdar
AU - Ramamoorthy Ramesh
AU - D.G Cahill
AB - Measurements of thermal conductivity by time-domain thermoreflectance in the temperature range 100<T<300 K are used to characterize the crystalline quality of epitaxial layers of a prototypical oxide, SrTiO3. Twenty samples from five institutions using two growth techniques, molecular beam epitaxy and pulsed laser deposition (PLD), were analyzed. Optimized growth conditions produce layers with comparable to bulk single crystals. Many PLD layers, particularly those that use ceramics as the target material, show surprisingly low . For homoepitaxial layers, the decrease in created by point defects correlates well with the expansion of the lattice parameter in the direction normal to the surface. © 2011 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.3579993
LA - eng
M1 - 22
N1 - cited By 52
N2 - Measurements of thermal conductivity by time-domain thermoreflectance in the temperature range 100<T<300 K are used to characterize the crystalline quality of epitaxial layers of a prototypical oxide, SrTiO3. Twenty samples from five institutions using two growth techniques, molecular beam epitaxy and pulsed laser deposition (PLD), were analyzed. Optimized growth conditions produce layers with comparable to bulk single crystals. Many PLD layers, particularly those that use ceramics as the target material, show surprisingly low . For homoepitaxial layers, the decrease in created by point defects correlates well with the expansion of the lattice parameter in the direction normal to the surface. © 2011 American Institute of Physics.
PY - 2011
T2 - Applied Physics Letters
TI - Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers
VL - 98
SN - 00036951
ER -