TY - JOUR
KW - Lead
KW - Nanostructured materials
KW - Zirconium
KW - Ferroelectric materials
KW - Nanotechnology
KW - Ferroelectricity
KW - Proof of concept
KW - Strontium titanates
KW - Negative capacitance
KW - Strontium alloys
KW - Heterojunctions
KW - Capacitance
KW - Experimental evidence
KW - Nanocomposite films
KW - Nanoscale
KW - Mean field theory
KW - Bi-layer
KW - Capacitance enhancement
KW - Classical limits
KW - Gate oxide
KW - NanoScale Transistors
KW - Negative capacitance effect
KW - SrTiO
KW - Subthreshold slope
KW - Tuning parameter
AU - A. Islam Khan
AU - D Bhowmik
AU - P Yu
AU - S. Joo Kim
AU - X Pan
AU - Ramamoorthy Ramesh
AU - S Salahuddin
AB - We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3, the composite capacitance was observed to be larger than the constituent SrTiO3 capacitance, indicating an effective negative capacitance of the constituent Pb(Zr0.2Ti0.8)O3 layer. Temperature is shown to be an effective tuning parameter for the ferroelectric negative capacitance and the degree of capacitance enhancement in the heterostructure. Landau's mean field theory based calculations show qualitative agreement with observed effects. This work underpins the possibility that by replacing gate oxides by ferroelectrics in nanoscale transistors, the sub threshold slope can be lowered below the classical limit (60 mV/decade). © 2011 American Institute of Physics.
BT - Applied Physics Letters
DO - 10.1063/1.3634072
LA - eng
M1 - 11
N1 - cited By 169
N2 - We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric Pb(Zr0.2Ti0.8)O3 and dielectric SrTiO3, the composite capacitance was observed to be larger than the constituent SrTiO3 capacitance, indicating an effective negative capacitance of the constituent Pb(Zr0.2Ti0.8)O3 layer. Temperature is shown to be an effective tuning parameter for the ferroelectric negative capacitance and the degree of capacitance enhancement in the heterostructure. Landau's mean field theory based calculations show qualitative agreement with observed effects. This work underpins the possibility that by replacing gate oxides by ferroelectrics in nanoscale transistors, the sub threshold slope can be lowered below the classical limit (60 mV/decade). © 2011 American Institute of Physics.
PY - 2011
T2 - Applied Physics Letters
TI - Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures
VL - 99
SN - 00036951
ER -