TY - JOUR
KW - Electric potential
KW - Perovskite
KW - Hysteresis
KW - Polarization
KW - Article
KW - Priority journal
KW - Ferroelectric polarization
KW - Bioengineering
KW - Computer interface
KW - Static electricity
AU - P Yu
AU - W Luo
AU - D Yi
AU - J.X Zhang
AU - M.D Rossell
AU - C.-H Yang
AU - L You
AU - G Singh-Bhalla
AU - S.Y Yang
AU - Q He
AU - Q.M Ramasse
AU - R Erni
AU - L.W Martin
AU - Y.H Chu
AU - S.T Pantelides
AU - S.J Pennycook
AU - Ramamoorthy Ramesh
AB - The control of material interfaces at the atomic level has led to novel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we employ a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite underlayers extends the generality of this phenomenon.
BT - Proceedings of the National Academy of Sciences of the United States of America
DO - 10.1073/pnas.1117990109
LA - eng
M1 - 25
N1 - cited By 133
N2 - The control of material interfaces at the atomic level has led to novel interfacial properties and functionalities. In particular, the study of polar discontinuities at interfaces between complex oxides lies at the frontier of modern condensed matter research. Here we employ a combination of experimental measurements and theoretical calculations to demonstrate the control of a bulk property, namely ferroelectric polarization, of a heteroepitaxial bilayer by precise atomic-scale interface engineering. More specifically, the control is achieved by exploiting the interfacial valence mismatch to influence the electrostatic potential step across the interface, which manifests itself as the biased-voltage in ferroelectric hysteresis loops and determines the ferroelectric state. A broad study of diverse systems comprising different ferroelectrics and conducting perovskite underlayers extends the generality of this phenomenon.
PY - 2012
SP - 9710
EP - 9715
T2 - Proceedings of the National Academy of Sciences of the United States of America
TI - Interface control of bulk ferroelectric polarization
VL - 109
SN - 00278424
ER -