TY - JOUR
KW - Pulsed laser deposition
KW - Copper
KW - Films
KW - Zinc oxide
KW - Zno
KW - Transparency
KW - Heterojunctions
KW - Semiconductor doping
KW - Acceptor doping
KW - Cu content
KW - Hall effect measurement
KW - Heterojunction diodes
KW - High transparency
KW - Hole conduction
KW - Hole conductivity
KW - P-type
KW - S-phase
KW - Transparent conducting materials
KW - Transparent conductors
KW - Semiconductor diodes
KW - Zinc sulfide
AU - A.M Diamond
AU - L Corbellini
AU - K.R Balasubramaniam
AU - Sharon S Chen
AU - S Wang
AU - T.S Matthews
AU - L.-W Wang
AU - Ramamoorthy Ramesh
AU - Joel W Ager
AB - Copper alloyed ZnS was investigated as a p-type, transparent conducting material composed of earth-abundant elements. Thin films of Cu-alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06-0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p-type. We find that transparency and conductivity are comparable to some of the best reported p-type materials with our best films exhibiting conductivities of 54 S cm -1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p-CuZnS/n-ZnO diodes were fabricated. Photo demonstrating the high transparency of a rectifying heterojunction diode made with p-type Cu-alloyed ZnS and n-type ZnO. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
BT - Physica Status Solidi (A) Applications and Materials Science
DO - 10.1002/pssa.201228181
LA - eng
M1 - 11
N1 - cited By 58
N2 - Copper alloyed ZnS was investigated as a p-type, transparent conducting material composed of earth-abundant elements. Thin films of Cu-alloyed ZnS were synthesized using pulsed laser deposition with Cu contents in the range of x = 0.06-0.27 (Cu content x is reported as the fraction of cation present). Thermopower and Hall effect measurements show that the films are p-type. We find that transparency and conductivity are comparable to some of the best reported p-type materials with our best films exhibiting conductivities of 54 S cm -1 and optical transmission of 65% at 550. The hole conduction mechanism is discussed in terms of possible Cu acceptor doping of the ZnS and hole conductivity in a minority Cu2S phase. Transparent rectifying p-CuZnS/n-ZnO diodes were fabricated. Photo demonstrating the high transparency of a rectifying heterojunction diode made with p-type Cu-alloyed ZnS and n-type ZnO. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PY - 2012
SP - 2101
EP - 2107
T2 - Physica Status Solidi (A) Applications and Materials Science
TI - Copper-alloyed ZnS as a p-type transparent conducting material
VL - 209
SN - 18626300
ER -