TY - JOUR
KW - Manganese oxide
KW - Multiferroics
KW - Exchange bias
KW - Ferroelectricity
KW - Antiferromagnetism
KW - Electric field effects
KW - Modulation
KW - Bipolar modulation
KW - Conducting channels
KW - Electric control
KW - Electrical control
KW - Field cooling
KW - Field-effect devices
KW - Ionic displacement
KW - Stable state
KW - Temperature cycling
KW - Gate dielectrics
AU - S.M Wu
AU - S.A Cybart
AU - D Yi
AU - J.M Parker
AU - Ramamoorthy Ramesh
AU - R.C Dynes
AB - We report the creation of a multiferroic field effect device with a BiFeO3 (BFO) (antiferromagnetic-ferroelectric) gate dielectric and a La0.7Sr0.3MnO3 (LSMO) (ferromagnetic) conducting channel that exhibits direct, bipolar electrical control of exchange bias. We show that exchange bias is reversibly switched between two stable states with opposite exchange bias polarities upon ferroelectric poling of the BFO. No field cooling, temperature cycling, or additional applied magnetic or electric field beyond the initial BFO polarization is needed for this bipolar modulation effect. Based on these results and the current understanding of exchange bias, we propose a model to explain the control of exchange bias. In this model the coupled antiferromagnetic-ferroelectric order in BFO along with the modulation of interfacial exchange interactions due to ionic displacement of Fe3+ in BFO relative to Mn3+/4+ in LSMO cause bipolar modulation. © 2013 American Physical Society.
BT - Physical Review Letters
DO - 10.1103/PhysRevLett.110.067202
LA - eng
M1 - 6
N1 - cited By 187
N2 - We report the creation of a multiferroic field effect device with a BiFeO3 (BFO) (antiferromagnetic-ferroelectric) gate dielectric and a La0.7Sr0.3MnO3 (LSMO) (ferromagnetic) conducting channel that exhibits direct, bipolar electrical control of exchange bias. We show that exchange bias is reversibly switched between two stable states with opposite exchange bias polarities upon ferroelectric poling of the BFO. No field cooling, temperature cycling, or additional applied magnetic or electric field beyond the initial BFO polarization is needed for this bipolar modulation effect. Based on these results and the current understanding of exchange bias, we propose a model to explain the control of exchange bias. In this model the coupled antiferromagnetic-ferroelectric order in BFO along with the modulation of interfacial exchange interactions due to ionic displacement of Fe3+ in BFO relative to Mn3+/4+ in LSMO cause bipolar modulation. © 2013 American Physical Society.
PY - 2013
T2 - Physical Review Letters
TI - Full electric control of exchange bias
VL - 110
SN - 00319007
ER -