TY - JOUR
KW - Energy consumption
KW - Velocity
KW - Electric potential
KW - Semiconductor
KW - Storage
KW - Electrode
KW - Oxygen
KW - Direct current (DC)
KW - Polarization
KW - Article
KW - Memory
KW - Photovoltaic system
KW - Research work
KW - Data storage device
KW - Illumination
KW - Memory cell
KW - Oxygen tension
KW - Solid state
KW - Ultraviolet radiation
AU - R Guo
AU - L You
AU - Y Zhou
AU - Z.S Lim
AU - X Zou
AU - L Chen
AU - Ramamoorthy Ramesh
AU - J Wang
AB - The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ∼10 μs programming and ∼10 ms erasing time. Furthermore, it can only withstand ∼105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO 3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. © 2013 Macmillan Publishers Limited. All rights reserved.
BT - Nature Communications
DO - 10.1038/ncomms2990
LA - eng
N1 - cited By 218
N2 - The quest for a solid state universal memory with high-storage density, high read/write speed, random access and non-volatility has triggered intense research into new materials and novel device architectures. Though the non-volatile memory market is dominated by flash memory now, it has very low operation speed with ∼10 μs programming and ∼10 ms erasing time. Furthermore, it can only withstand ∼105 rewriting cycles, which prevents it from becoming the universal memory. Here we demonstrate that the significant photovoltaic effect of a ferroelectric material, such as BiFeO 3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in a ferroelectric memory. A prototype 16-cell memory based on the cross-bar architecture has been prepared and tested, demonstrating the feasibility of this technique. © 2013 Macmillan Publishers Limited. All rights reserved.
PY - 2013
T2 - Nature Communications
TI - Non-volatile memory based on the ferroelectric
VL - 4
SN - 20411723
ER -