TY - JOUR
KW - Anisotropy
KW - Magnetic field
KW - Geometry
KW - Semiconductor
KW - Electrode
KW - Electronic equipment
KW - Experimental study
KW - Article
KW - Ab initio calculations
KW - Mathematical analysis
KW - Measurement method
KW - Semiconductor industry
KW - Temperature effect
KW - Antiferromagnetic semiconductor
KW - Observational study
AU - I Fina
AU - X Marti
AU - D Yi
AU - J F Liu
AU - J.H Chu
AU - C Rayan-Serrao
AU - S Suresha
AU - A.B Shick
AU - J Železný
AU - T Jungwirth
AU - J Fontcuberta
AU - Ramamoorthy Ramesh
AB - Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the currentperpendicular- to-plane geometry without introducing a tunnel barrier into the stack. Temperature- dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.
BT - Nature Communications
DO - 10.1038/ncomms5671
LA - eng
N1 - cited By 72
N2 - Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr2IrO4. Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the currentperpendicular- to-plane geometry without introducing a tunnel barrier into the stack. Temperature- dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.
PB - Nature Publishing Group
PY - 2014
T2 - Nature Communications
TI - Anisotropic magnetoresistance in an antiferromagnetic semiconductor
VL - 5
SN - 20411723
ER -