TY - JOUR
KW - Room temperature
KW - Ferroelectric materials
KW - Superlattices
KW - Negative capacitance
KW - Epitaxial strain
AU - W Gao
AU - A Khan
AU - X Marti
AU - C Nelson
AU - C Serrao
AU - J Ravichandran
AU - Ramamoorthy Ramesh
AU - S Salahuddin
AB - We demonstrate room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. In epitaxially grown superlattice of ferroelectric BSTO (Ba0.8Sr0.2TiO3) and dielectric LAO (LaAlO3), capacitance was found to be larger compared to the constituent LAO (dielectric) capacitance. This enhancement of capacitance in a series combination of two capacitors indicates that the ferroelectric was stabilized in a state of negative capacitance. Negative capacitance was observed for superlattices grown on three different substrates (SrTiO3 (001), DyScO3 (110), and GdScO3 (110)) covering a large range of substrate strain. This demonstrates the robustness of the effect as well as potential for controlling the negative capacitance effect using epitaxial strain. Room-temperature demonstration of negative capacitance is an important step toward lowering the subthreshold swing in a transistor below the intrinsic thermodynamic limit of 60 mV/decade and thereby improving energy efficiency. © 2014 American Chemical Society.
BT - Nano Letters
DO - 10.1021/nl502691u
LA - eng
M1 - 10
N1 - cited By 73
N2 - We demonstrate room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure. In epitaxially grown superlattice of ferroelectric BSTO (Ba0.8Sr0.2TiO3) and dielectric LAO (LaAlO3), capacitance was found to be larger compared to the constituent LAO (dielectric) capacitance. This enhancement of capacitance in a series combination of two capacitors indicates that the ferroelectric was stabilized in a state of negative capacitance. Negative capacitance was observed for superlattices grown on three different substrates (SrTiO3 (001), DyScO3 (110), and GdScO3 (110)) covering a large range of substrate strain. This demonstrates the robustness of the effect as well as potential for controlling the negative capacitance effect using epitaxial strain. Room-temperature demonstration of negative capacitance is an important step toward lowering the subthreshold swing in a transistor below the intrinsic thermodynamic limit of 60 mV/decade and thereby improving energy efficiency. © 2014 American Chemical Society.
PB - American Chemical Society
PY - 2014
SP - 5814
EP - 5819
T2 - Nano Letters
TI - Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure
VL - 14
SN - 15306984
ER -