TY - JOUR
KW - Electronics
KW - Transmission electron microscopy
KW - Film
KW - Perovskite
KW - Crystal structure
KW - Elasticity
KW - Polarization
KW - Electronic equipment
KW - Electric field
KW - Article
KW - X-ray Diffraction
KW - Thin section
KW - Tensile strength
KW - Scanning probe microscopy
KW - Electromagnetic method
KW - Plane strain
KW - Electron diffraction
KW - Ferroelastic switching
KW - Molecular dynamics
AU - C W Wang
AU - X Ke
AU - J Wang
AU - R Liang
AU - Z Luo
AU - Y Tian
AU - D Yi
AU - Q Zhang
AU - J Wang
AU - X.-F Han
AU - G Van Tendeloo
AU - L.-Q Chen
AU - C.-W Nan
AU - Ramamoorthy Ramesh
AU - J Zhang
AB - A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layeredperovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
BT - Nature Communications
DO - 10.1038/ncomms10636
LA - eng
N1 - cited By 43
N2 - A controllable ferroelastic switching in ferroelectric/multiferroic oxides is highly desirable due to the non-volatile strain and possible coupling between lattice and other order parameter in heterostructures. However, a substrate clamping usually inhibits their elastic deformation in thin films without micro/nano-patterned structure so that the integration of the non-volatile strain with thin film devices is challenging. Here, we report that reversible in-plane elastic switching with a non-volatile strain of approximately 0.4% can be achieved in layeredperovskite Bi2WO6 thin films, where the ferroelectric polarization rotates by 90° within four in-plane preferred orientations. Phase-field simulation indicates that the energy barrier of ferroelastic switching in orthorhombic Bi2WO6 film is ten times lower than the one in PbTiO3 films, revealing the origin of the switching with negligible substrate constraint. The reversible control of the in-plane strain in this layered-perovskite thin film demonstrates a new pathway to integrate mechanical deformation with nanoscale electronic and/or magnetoelectronic applications.
PB - Nature Publishing Group
PY - 2016
T2 - Nature Communications
TI - Ferroelastic switching in a layered-perovskite thin film
VL - 7
SN - 20411723
ER -