TY - JOUR
KW - Temperature
KW - Thin films
KW - Magnetoresistance
KW - Ionic liquids
KW - Lanthanum compounds
KW - Iridium compounds
KW - Strontium compounds
KW - Ground state
KW - Semiconductor doping
KW - Electric field effects
KW - Ambipolar transport
KW - Channel resistance
KW - Conduction Mechanism
KW - Hopping conduction
KW - Iridate
KW - Positive magnetoresistance
KW - Temperature-dependent resistance
KW - Variable-range hopping
KW - Mott insulators
AU - J Ravichandran
AU - C.R Serrao
AU - D.K Efetov
AU - D Yi
AU - Y.S Oh
AU - S.-W Cheong
AU - Ramamoorthy Ramesh
AU - P Kim
AB - Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr2IrO4 (SIO) is investigated using ionic liquid gating. The temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the channel resistance and chemical doping. We observe a crossover from high temperature negative to low temperature positive magnetoresistance around ∼80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is discussed in the light of conduction mechanisms of SIO, especially variable range hopping (VRH), and its relevance to the insulating ground state of SIO. © 2016 IOP Publishing Ltd.
BT - Journal of Physics Condensed Matter
DO - 10.1088/0953-8984/28/50/505304
LA - eng
M1 - 50
N1 - cited By 7
N2 - Electric field effect (EFE) controlled magnetoelectric transport in thin films of undoped and La-doped Sr2IrO4 (SIO) is investigated using ionic liquid gating. The temperature dependent resistance measurements exhibit insulating behavior in chemically and EFE doped samples with the band filling up to 10%. The ambipolar transport across the Mott gap is demonstrated by EFE tuning of the channel resistance and chemical doping. We observe a crossover from high temperature negative to low temperature positive magnetoresistance around ∼80-90 K, irrespective of the filling. This temperature and magnetic field dependent crossover is discussed in the light of conduction mechanisms of SIO, especially variable range hopping (VRH), and its relevance to the insulating ground state of SIO. © 2016 IOP Publishing Ltd.
PB - Institute of Physics Publishing
PY - 2016
T2 - Journal of Physics Condensed Matter
TI - Ambipolar transport and magneto-resistance crossover in a Mott insulator, Sr2IrO4
VL - 28
SN - 09538984
ER -