TY - JOUR
KW - Electric fields
KW - Domain walls
KW - Ferroelectric materials
KW - Ferroelectricity
KW - Ferroelectric domains
KW - Electric-field control
KW - Electronic properties
KW - Digital devices
KW - Electronic structure
KW - Inversion layers
KW - Charge compensation
KW - Domain wall devices
KW - Electronic transport
KW - Electrostatic potentials
KW - Enhanced conductivity
KW - Two-dimensional materials
AU - J.A Mundy
AU - J Schaab
AU - Y Kumagai
AU - A Cano
AU - M Stengel
AU - I.P Krug
AU - D.M Gottlob
AU - H Doǧanay
AU - M.E Holtz
AU - R Held
AU - Z Yan
AU - E Bourret
AU - C.M Schneider
AU - D.G Schlom
AU - D.A Muller
AU - Ramamoorthy Ramesh
AU - N.A Spaldin
AU - D Meier
AB - Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO 3. We relate the transition to the formation - and eventual activation - of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry. © 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.
BT - Nature Materials
DO - 10.1038/nmat4878
LA - eng
M1 - 6
N1 - cited By 41
N2 - Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO 3. We relate the transition to the formation - and eventual activation - of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry. © 2017 Macmillan Publishers Limited, part of Springer Nature. All rights reserved.
PB - Nature Publishing Group
PY - 2017
SP - 622
EP - 627
T2 - Nature Materials
TI - Functional electronic inversion layers at ferroelectric domain walls
VL - 16
SN - 14761122
ER -