TY - JOUR
KW - Manganese compounds
KW - Electric fields
KW - Iron compounds
KW - Lanthanum compounds
KW - Multiferroics
KW - BiFeO3
KW - Exchange bias
KW - Bismuth compounds
KW - Energy utilization
KW - Logic devices
KW - Strontium compounds
KW - Atoms
KW - Behavioral research
KW - Magnetization
KW - Magnetoelectric
KW - Oxide interfaces
KW - Polar discontinuity
AU - D Yi
AU - P Yu
AU - Y.-C Chen
AU - H.-H Lee
AU - Q He
AU - Y.-H Chu
AU - Ramamoorthy Ramesh
AB - Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
BT - Advanced Materials
DO - 10.1002/adma.201806335
LA - eng
M1 - 11
N1 - cited By 8
N2 - Electric field control of magnetism ultimately opens up the possibility of reducing energy consumption of memory and logic devices. Electric control of magnetization and exchange bias are demonstrated in all-oxide heterostructures of BiFeO 3 (BFO) and La 0.7 Sr 0.3 MnO 3 (LSMO). However, the role of the polar heterointerface on magnetoelectric (ME) coupling is not fully explored. Here, the ME coupling in BFO/LSMO heterostructures with two types of interfaces, achieved by exploiting the interface engineering at the atomic scale, is investigated. It is shown that both magnetization and exchange bias are reversibly controlled by switching the ferroelectric polarization of BFO. Intriguingly, distinctly different modulation behaviors that depend on the interfacial atomic sequence are observed. These results provide new insights into the underlying physics of ME coupling in the model system. This study highlights that designing interface at the atomic scale is of general importance for functional spintronic devices. © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PB - Wiley-VCH Verlag
PY - 2019
T2 - Advanced Materials
TI - Tailoring Magnetoelectric Coupling in BiFeO 3 /La 0.7 Sr 0.3 MnO 3 Heterostructure through the Interface Engineering
VL - 31
SN - 09359648
ER -