TY - JOUR
KW - Electric fields
KW - Electric-field control
KW - Random access storage
KW - Controlled nanocrack
KW - Nano-electromechanical
KW - Nanoelectromechanical switches
KW - Non-volatile memory
KW - Non-volatile random access memory
KW - Off-state leakage current
KW - ON/OFF current ratio
KW - Electric switches
AU - Q Luo
AU - Z Guo
AU - H Huang
AU - Q Zou
AU - X Jiang
AU - S Zhang
AU - H Wang
AU - M Song
AU - B Zhang
AU - H Chen
AU - H Gu
AU - G Han
AU - X Yang
AU - X Zou
AU - K.-Y Wang
AU - Z Liu
AU - J Hong
AU - Ramamoorthy Ramesh
AU - L You
AB - Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic. © 1980-2012 IEEE.
BT - IEEE Electron Device Letters
DO - 10.1109/LED.2019.2917924
LA - eng
M1 - 7
N1 - cited By 1
N2 - Nanoelectromechanical (NEM) switches could surmount the Boltzmann Tyranny in the current charge-carrier systems. However, thus far, practical implementations of the NEM systems have been hindered by the complicated fabrication processes of forming the extremely small air gap. Here, we realize a very simple NEM switch by exploiting a switchable nanocrack controlled by an electric field in a metallic alloy-ferroelectric heterostructure. The crack is formed in a controllable manner in terms of its initiation, location, and orientation through a bridge-like structure. The open and closed states of the crack are programmed under a cyclic electric field. In addition, an abrupt switching behavior with a nonvolatile high ON/OFF current ratio (>107) is measured owing to the near-zero OFF-state leakage current across the crack. This simple nanocrack switch presents a novel opportunity in the NEM systems, which can be used as a new nonvolatile random-access memory and logic. © 1980-2012 IEEE.
PB - Institute of Electrical and Electronics Engineers Inc.
PY - 2019
SP - 1209
EP - 1212
T2 - IEEE Electron Device Letters
TI - Nanoelectromechanical switches by controlled switchable cracking
VL - 40
SN - 07413106
ER -