TY - JOUR
KW - Electric fields
KW - Iron compounds
KW - Domain walls
KW - Ferroelectric materials
KW - Bismuth compounds
KW - Ferroelectricity
KW - Electric excitation
KW - Electric impedance measurement
KW - Excited states
KW - Microwave oscillators
KW - Microwaves
KW - Nanoelectronics
KW - Rectifying circuits
KW - Structural dynamics
KW - AC Conductivity
KW - Bismuth ferrite
KW - Ferroelectric domains
KW - High-speed electronics
KW - Microwave conductivity
KW - Microwave microscopy
KW - Nanoelectronic devices
KW - Radio frequency applications
KW - Microwave circuits
AU - Y.-L Huang
AU - L Zheng
AU - P Chen
AU - X Cheng
AU - S.-L Hsu
AU - T N Yang
AU - X Wu
AU - L Ponet
AU - Ramamoorthy Ramesh
AU - L.-Q Chen
AU - S Artyukhin
AU - Y.-H Chu
AU - K Lai
AB - Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 103 S m−1 is observed in certain BiFeO3 DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
BT - Advanced Materials
DO - 10.1002/adma.201905132
LA - eng
M1 - 9
N1 - cited By 0
N2 - Nanoelectronic devices based on ferroelectric domain walls (DWs), such as memories, transistors, and rectifiers, have been demonstrated in recent years. Practical high-speed electronics, on the other hand, usually demand operation frequencies in the gigahertz (GHz) regime, where the effect of dipolar oscillation is important. Herein, an unexpected giant GHz conductivity on the order of 103 S m−1 is observed in certain BiFeO3 DWs, which is about 100 000 times greater than the carrier-induced direct current (dc) conductivity of the same walls. Surprisingly, the nominal configuration of the DWs precludes the alternating current (ac) conduction under an excitation electric field perpendicular to the surface. Theoretical analysis shows that the inclined DWs are stressed asymmetrically near the film surface, whereas the vertical walls in a control sample are not. The resultant imbalanced polarization profile can then couple to the out-of-plane microwave fields and induce power dissipation, which is confirmed by the phase-field modeling. Since the contributions from mobile-carrier conduction and bound-charge oscillation to the ac conductivity are equivalent in a microwave circuit, the research on local structural dynamics may open a new avenue to implement DW nano-devices for radio-frequency applications. © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PB - Wiley-VCH Verlag
PY - 2020
T2 - Advanced Materials
TI - Unexpected Giant Microwave Conductivity in a Nominally Silent BiFeO3 Domain Wall
VL - 32
SN - 09359648
ER -