TY - JOUR
AU - H Taz
AU - B Prasad
AU - Y.-L Huang
AU - Z Chen
AU - S.-L Hsu
AU - R Xu
AU - V Thakare
AU - T.S Sakthivel
AU - C Liu
AU - M Hettick
AU - R Mukherjee
AU - S Seal
AU - L.W Martin
AU - A Javey
AU - G Duscher
AU - Ramamoorthy Ramesh
AU - R Kalyanaraman
AB - A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity ( 500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment ( 200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after  1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields. © 2020, The Author(s).
BT - Scientific Reports
DO - 10.1038/s41598-020-58592-5
LA - eng
M1 - 1
N1 - cited By 0
N2 - A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity ( 500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment ( 200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after  1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields. © 2020, The Author(s).
PB - Nature Research
PY - 2020
T2 - Scientific Reports
TI - Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
VL - 10
SN - 20452322
ER -