TY - JOUR
AU - Ke Chen
AU - Bai Song
AU - Navaneetha K Ravichandran
AU - Qiye Zheng
AU - Xi Chen
AU - Hwijong Lee
AU - Haoran Sun
AU - Sheng Li
AU - Geethal AmilaGama Gamage
AU - Fei Tian
AU - Zhiwei Ding
AU - Qichen Song
AU - Akash Rai
AU - Hanlin Wu
AU - Pawan Koirala
AU - Aaron J Schmidt
AU - Kenji Watanabe
AU - Bing Lv
AU - Zhifeng Ren
AU - Li Shi
AU - David G Cahill
AU - Takashi Taniguchi
AU - David Broido
AU - Gang Chen
AB - <p><span>Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched&nbsp;</span><span>10</span><span>B or&nbsp;</span><span>11</span><span>B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.</span></p>
BT - Science
DA - 01/2020
DO - 10.1126/science.aaz6149
IS - 6477
LA - eng
N2 - <p><span>Materials with high thermal conductivity (κ) are of technological importance and fundamental interest. We grew cubic boron nitride (cBN) crystals with controlled abundance of boron isotopes and measured κ greater than 1600 watts per meter-kelvin at room temperature in samples with enriched&nbsp;</span><span>10</span><span>B or&nbsp;</span><span>11</span><span>B. In comparison, we found that the isotope enhancement of κ is considerably lower for boron phosphide and boron arsenide as the identical isotopic mass disorder becomes increasingly invisible to phonons. The ultrahigh κ in conjunction with its wide bandgap (6.2 electron volts) makes cBN a promising material for microelectronics thermal management, high-power electronics, and optoelectronics applications.</span></p>
PY - 2020
SP - 555 
EP -  559
ST - Science
T2 - Science
TI - Ultrahigh thermal conductivity in isotope-enriched cubic boron nitride
VL - 367
SN - 0036-8075
ER -