Mass removed from single crystal silicon samples by high irradiance (1×109 to 1×1011 W/cm2) single pulse laser ablation was studied by measuring the resulting crater morphology with a white light interferometric microscope. The craters show a strong nonlinear change in both the volume and depth when the laser irradiance is less than or greater than ≈2.2×1010 W/cm2. Time-resolved shadowgraph images of the ablated silicon plume were obtained over this irradiance range. The images show that the increase in crater volume and depth at the threshold of 2.2×1010 W/cm2 is accompanied by large size droplets leaving the silicon surface, with a time delay ∼300 ns. A numerical model was used to estimate the thickness of the layer heated to approximately the critical temperature. The model includes transformation of liquid metal into liquid dielectric near the critical state (i.e., induced transparency). In this case, the estimated thickness of the superheated layer at a delay time of 200–300 ns shows a close agreement with measured crater depths. Induced transparency is demonstrated to play an important role in the formation of a deep superheated liquid layer, with subsequent explosive boiling responsible for large-particulate ejection.
AD -Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA Kwangju Inst Sci & Technol, Kwangju 500712, South Korea
BT - Journal of Applied Physics C2 - LBNL-45733 DA - 08/2000 DO - 10.1063/1.373865 IS - 3 LA - eng LB - Laser N1 -LBNL-45733 NOT IN FILE
N2 -Mass removed from single crystal silicon samples by high irradiance (1×109 to 1×1011 W/cm2) single pulse laser ablation was studied by measuring the resulting crater morphology with a white light interferometric microscope. The craters show a strong nonlinear change in both the volume and depth when the laser irradiance is less than or greater than ≈2.2×1010 W/cm2. Time-resolved shadowgraph images of the ablated silicon plume were obtained over this irradiance range. The images show that the increase in crater volume and depth at the threshold of 2.2×1010 W/cm2 is accompanied by large size droplets leaving the silicon surface, with a time delay ∼300 ns. A numerical model was used to estimate the thickness of the layer heated to approximately the critical temperature. The model includes transformation of liquid metal into liquid dielectric near the critical state (i.e., induced transparency). In this case, the estimated thickness of the superheated layer at a delay time of 200–300 ns shows a close agreement with measured crater depths. Induced transparency is demonstrated to play an important role in the formation of a deep superheated liquid layer, with subsequent explosive boiling responsible for large-particulate ejection.
PY - 2000 SP - 1638 EP - 1649 ST - J. Appl. Phys. T2 - Journal of Applied Physics TI - Explosive change in crater properties during high power nanosecond laser ablation of silicon VL - 88 ER -