TY - JOUR
KW - Deposition
KW - Temperature
KW - Pulsed laser deposition
KW - Film
KW - Thin
KW - Thin film
KW - Thin-film
KW - Thin films
KW - Ablation
KW - Laser
KW - Laser ablation
KW - Laser ablation
KW - Applications
KW - Superconducting
KW - Y-ba-cu-o
KW - Ybacuo
KW - Layers
KW - Oriented
KW - Time
KW - Ceo2
KW - Composition
KW - Structure
KW - Alloys
KW - High temperature
KW - Density
KW - Pulsed laser
KW - Pulsed laser
KW - Technology
KW - M
KW - Current-density
KW - Substrate
KW - Substrates
KW - Layer
KW - Ybco
KW - Multilayers
KW - Dielectric
KW - High-temperature
KW - Intermediate
KW - K
KW - Laser deposition
KW - Polycrystalline
KW - Pulsed laser deposition
KW - Ysz
KW - Yttria stabilized zirconia
KW - Yttria stabilized zirconia
KW - Zirconia
KW - Zirconium
KW - Pulsed laser deposition
KW - Fabrication
KW - Amorphous
KW - Multichip modules
KW - Bombardment
KW - Critical current densities
KW - Critical-current-density
KW - Mu-m
KW - Pld
KW - Sio2
AU - Ronald P Reade
AU - Richard E Russo
AB - <p>One of the most significant recent applications of laser ablation is pulsed laser deposition (PLD), a powerful new technology for fabricating unique thin film compositions and structures. Ion-assisted PLD (IAPLD) enhances the capabilities of this technology by providing oriented thin-film structures on amorphous and randomly-ordered polycrystalline substrates. IAPLD is particularly well-suited for fabricating multilayer thin film structures suitable for high temperature superconducting multi-chip modules, We have fabricated such structures on 5.0 μm SiO<sub>2</sub> dielectric layers using IAPLD yttria-stabilized zirconia (YSZ) layers, obtaining critical current densities as high as 3 x 10<sup>5</sup> A/cm<sup>2</sup> at 77 K. We have also constructed YBCO/IAPLD-YSZ/SiO<sub>2</sub>/YSZ/YBCO/CeO<sub>2</sub>/YSZ and YBCO/IAPLD-YSZ/amorphous-YSZ/YBCO/CeO<sub>2</sub>/YSZ multilayers. In addition, we are working on IAPLD of oriented CeO<sub>2</sub> layers to improve the YBCO critical current densities</p>
AD - <p>LAWRENCE BERKELEY LAB,BERKELEY,CA 94720</p>
AN - 70
BT - Applied Surface Science
LA - eng
LB - Laser
N1 - <p>NOT IN FILE</p>
N2 - <p>One of the most significant recent applications of laser ablation is pulsed laser deposition (PLD), a powerful new technology for fabricating unique thin film compositions and structures. Ion-assisted PLD (IAPLD) enhances the capabilities of this technology by providing oriented thin-film structures on amorphous and randomly-ordered polycrystalline substrates. IAPLD is particularly well-suited for fabricating multilayer thin film structures suitable for high temperature superconducting multi-chip modules, We have fabricated such structures on 5.0 μm SiO<sub>2</sub> dielectric layers using IAPLD yttria-stabilized zirconia (YSZ) layers, obtaining critical current densities as high as 3 x 10<sup>5</sup> A/cm<sup>2</sup> at 77 K. We have also constructed YBCO/IAPLD-YSZ/SiO<sub>2</sub>/YSZ/YBCO/CeO<sub>2</sub>/YSZ and YBCO/IAPLD-YSZ/amorphous-YSZ/YBCO/CeO<sub>2</sub>/YSZ multilayers. In addition, we are working on IAPLD of oriented CeO<sub>2</sub> layers to improve the YBCO critical current densities</p>
PY - 1996
SP - 726
EP - 730
T2 - Applied Surface Science
TI - Ion-Assisted Pulsed-Laser Deposition for the Fabrication of Y-Ba-Cu-O Multilayer Structures Using Oriented Intermediate Layers of YSZ and CeO<sub>2</sub>
VL - 96-8
ER -