TY - JOUR
KW - Laser radiation
KW - Copper oxides
KW - High−tc superconductors
KW - Barium oxides
KW - Film growth
KW - Yttrium oxides
KW - Cerium oxides
KW - Crystal structure
KW - Energy beam deposition films
KW - Ion beams
KW - Physical vapor deposition
AU - Ronald P Reade
AU - Stefan R Church
AU - Richard E Russo
AB - <p>Ion bombardment on the surface of a substrate during deposition of a thin film [ion‐assisted (IA) deposition] is used to control thin‐film crystalline orientation and phase. Ion‐assisted deposition is demonstrated with the relatively new pulsed‐laser deposition (PLD) technique, a method of thin‐film growth that has shown promise for the synthesis of high‐temperature superconductor and other complex oxide films. A versatile vacuum chamber with independent control of ion‐gun parameters was developed for ion‐assisted pulsed‐laser deposition (IAPLD). Control of crystalline orientation and alignment of yttria‐stabilized zirconia and CeO<sub>2</sub> layers for use in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ</sub> superconductor devices is demonstrated using this IAPLD technology.</p>
BT - Review of Scientific Instrumentation
C2 - LBNL-36978
DO - 10.1063/1.1146496
IS - 6
LA - eng
LB - Laser
N2 - <p>Ion bombardment on the surface of a substrate during deposition of a thin film [ion‐assisted (IA) deposition] is used to control thin‐film crystalline orientation and phase. Ion‐assisted deposition is demonstrated with the relatively new pulsed‐laser deposition (PLD) technique, a method of thin‐film growth that has shown promise for the synthesis of high‐temperature superconductor and other complex oxide films. A versatile vacuum chamber with independent control of ion‐gun parameters was developed for ion‐assisted pulsed‐laser deposition (IAPLD). Control of crystalline orientation and alignment of yttria‐stabilized zirconia and CeO<sub>2</sub> layers for use in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ</sub> superconductor devices is demonstrated using this IAPLD technology.</p>
PY - 1995
SP - 3610
EP - 3614
ST - Rev. Sci. Instrum.
T2 - Review of Scientific Instrumentation
TI - Ion assisted pulsed laser deposition
VL - 66
ER -