Existing technology to construct high‐temperature superconductor(HTSC) multichip modules (MCM’s) incorporating several YBa2Cu3O7−δ(YBCO)thin films and thick dielectric layers are based on epitaxial growth of all layers from the template of a single‐crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria‐stabilized zirconia (YSZ) intermediate layer deposited by ion‐assisted pulsed‐laser deposition. Using this technique, a YBCO thin film with T c ∼87 K and J c ∼3×105 A/cm2 was grown on a 5 μm amorphous SiO2 layer. In addition, YBCO/YSZ/SiO2/YSZ/YBCO/CeO2/YSZ and YBCO/YSZ/amorphous‐YSZ/YBCO/CeO2/YBCO multilayer structures were constructed.
AN - 57 BT - Applied Physics Letters C2 - LBNL-36910 DO - 10.1063/1.114285 IS - 15 LA - eng LB - Laser N1 -LBNL-36910 NOT IN FILE
N2 -Existing technology to construct high‐temperature superconductor(HTSC) multichip modules (MCM’s) incorporating several YBa2Cu3O7−δ(YBCO)thin films and thick dielectric layers are based on epitaxial growth of all layers from the template of a single‐crystal substrate. This work demonstrates an alternate method to fabricate these structures: the use of a biaxially aligned yttria‐stabilized zirconia (YSZ) intermediate layer deposited by ion‐assisted pulsed‐laser deposition. Using this technique, a YBCO thin film with T c ∼87 K and J c ∼3×105 A/cm2 was grown on a 5 μm amorphous SiO2 layer. In addition, YBCO/YSZ/SiO2/YSZ/YBCO/CeO2/YSZ and YBCO/YSZ/amorphous‐YSZ/YBCO/CeO2/YBCO multilayer structures were constructed.
PY - 1995 SP - 2001 EP - 2003 ST - Appl. Phys. Lett. T2 - Applied Physics Letters TI - Y-Ba-Cu-O multilayer structures with amorphous dielectric layers for multichip modules using ion-assisted pulsed laser deposition VL - 66 ER -