TY - JOUR KW - Model KW - Comparison KW - Temperature KW - Transportation KW - USA KW - Surface KW - Emission KW - Pulse KW - Simulation KW - Laser KW - Intensities KW - Intensity KW - Time KW - Ca KW - E KW - Fluence KW - Fluences KW - Pulses KW - Science KW - C KW - Mechanism KW - Excitation KW - Rates KW - Picosecond KW - Picosecond laser KW - Pulsed laser KW - Pulsed laser KW - Electron KW - Nm KW - Melting KW - Silicon KW - Semiconductor KW - Equation KW - Threshold KW - Semiconductors KW - Electron temperature KW - Electron emission KW - Electron-emission KW - Damage KW - Electron-temperature KW - Infrared KW - Infrared picosecond laser-induced electron emission KW - Lattice KW - Pulse width KW - Set KW - Yield KW - Yields AU - Samuel S Mao AU - Xianglei Mao AU - Ralph Greif AU - Richard E Russo AB -

In this study, we present a self-consistent model for picosecond laser induced electron emission from silicon. Surface electron emission due to a pulsed laser excitation originates from thermionic and photoelectric effects, both of which depend on the surface electron temperature and incident laser pulse intensity. By numerically solving a set of coupled transport equations, time dependent surface electron temperature as well as lattice temperature was determined. The electron emission rates and electron yields due to photoelectric and thermionic effects have been studied for varying pulse width and pulse intensity. For picosecond pulses at 1064 nm, the dominant emission mechanism was found to be photoelectric emission for pulse fluences below the melting threshold. In addition, a comparison between electron emission due to the picosecond infrared pulse and a picosecond 532 nm pulse was also presented. (C) 1998 Elsevier Science B.V

AD -

Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA Univ Calif Berkeley, Dept Engn Mech, Berkeley, CA 94720 USA

AN - 90 BT - Applied Surface Science C2 - LBNL-41230 LA - eng LB - Laser N1 -

LBNL-41230 NOT IN FILE

N2 -

In this study, we present a self-consistent model for picosecond laser induced electron emission from silicon. Surface electron emission due to a pulsed laser excitation originates from thermionic and photoelectric effects, both of which depend on the surface electron temperature and incident laser pulse intensity. By numerically solving a set of coupled transport equations, time dependent surface electron temperature as well as lattice temperature was determined. The electron emission rates and electron yields due to photoelectric and thermionic effects have been studied for varying pulse width and pulse intensity. For picosecond pulses at 1064 nm, the dominant emission mechanism was found to be photoelectric emission for pulse fluences below the melting threshold. In addition, a comparison between electron emission due to the picosecond infrared pulse and a picosecond 532 nm pulse was also presented. (C) 1998 Elsevier Science B.V

PY - 1998 SP - 206 EP - 211 T2 - Applied Surface Science TI - Simulation of infrared picosecond laser-induced electron emission from semiconductors VL - 129 ER -