Photoluminescence (PL) of chemically vapor deposited Si on silica aerogels has been investigated as a function of annealing temperature up to 650°C in air. The PL peak red shifts considerably with temperatures up to 350°C and then slightly blue shifts above 350°C. There are at least two different oxidation stages in the thermal annealing of porous Si: surface oxidation below 350°C, which results in higher luminescence yield particularly for large Si particles, and internal oxidation above 350°C, which reduces the effective particle size.
BT - Solid State Communications LA - eng N1 -0038-1098doi: DOI: 10.1016/0038-1098(94)90564-9
N2 -Photoluminescence (PL) of chemically vapor deposited Si on silica aerogels has been investigated as a function of annealing temperature up to 650°C in air. The PL peak red shifts considerably with temperatures up to 350°C and then slightly blue shifts above 350°C. There are at least two different oxidation stages in the thermal annealing of porous Si: surface oxidation below 350°C, which results in higher luminescence yield particularly for large Si particles, and internal oxidation above 350°C, which reduces the effective particle size.
PY - 1994 SP - 645 EP - 648 T2 - Solid State Communications TI - Thermal annealing of photoluminescent Si deposited on silica aerogels VL - 91 ER -