Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ~ Q1/2, whereas the rate normalized to the average power decreases ~ Q-1/2, with Q being the mean ion charge state number.
BT - Applied Physics Letters C1 -Windows and Daylighting Group
C2 - LBNL-171E CN - LBNL-171E CY - Boulder, CO DA - 08/2004 DO - 10.1063/1.2936307 IS - 20 LA - eng N2 -Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ~ Q1/2, whereas the rate normalized to the average power decreases ~ Q-1/2, with Q being the mean ion charge state number.
PP - Boulder, CO PY - 2008 T2 - Applied Physics Letters TI - Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions VL - 92 ER -