TY - JOUR AU - Michael S.H Leung AU - Ralf Klockenbrink AU - Christian F Kisielowski AU - Hiroaki Fujii AU - Joachim Krüger AU - Sudhir G Subramanya AU - André Anders AU - Zuzanna Liliental-Weber AU - Michael D Rubin AU - Eicke R Weber AU - Joachim Krüger AB -

GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~0.5 μm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs through a minimum canier concentration of ~1015 cm-3 was achieved.

BT - Materials Research Society Proceedings C1 -

Windows and Daylighting Group

C2 - LBNL-39851 DO - 10.1557/PROC-449-221 IS - 221 LA - eng N1 -

1996 MRS Fall Meeting

N2 -

GaN films were grown on sapphire substrates at temperatures below 1000 K utilizing a Hollow Anode nitrogen ion source. A Ga flux limited growth rate of ~0.5 μm/h is demonstrated. Active utilization of strain and the assistance of a nitrogen partial pressure during buffer layer growth are found to be crucial issues that can improve the film quality. The best films exhibit a full width at half maximum of the x-ray rocking curves of 80 arcsec and 1.85 meV for the excitonic photoluminescence measured at 4 K. A Volmer-Weber three dimensional growth mode and the spontaneous formation of cubic GaN inclusions in the hexagonal matrix are observed in the investigated growth temperature range. It is argued that this growth mode contributes to a limitation of the carrier mobility in these films that did not exceed 120 cm2/Vs through a minimum canier concentration of ~1015 cm-3 was achieved.

PY - 1997 ST - MRS Proceedings T2 - Materials Research Society Proceedings TI - Pressure Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source VL - 449 ER -