TY - JOUR KW - Optical properties KW - Dual magnetron sputtering KW - Electrical resistivity KW - Er ion implantation KW - Tungsten oxide films AU - Sodky H Mohamed AU - André Anders AB -

Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures

BT - Thin Solid Films C1 -

Windows and Daylighting Group

C2 - LBNL-62248 DA - 05/2007 DO - 10.1016/j.tsf.2006.12.179 IS - 13 LA - eng M1 - 8 N2 -

Amorphous and partially crystalline WO3 thin films were prepared by reactive dual magnetron sputtering and successively implanted by erbium ions with a fluence in the range from 7.7 x 1014 to 5 x 1015 ions/cm2. The electrical and optical properties were studied as a function of the film deposition parameters and the ion fluence. Ion implantation caused a strong decrease of the resistivity, a moderate decrease of the index of refraction and a moderate increase of the extinction coefficient in the visible and near infrared, while the optical band gap remained almost unchanged. These effects could be largely ascribed to ion-induced oxygen deficiency. When annealed in air, the already low resistivities of the implanted samples decreased further up to 70°C, whereas oxidation, and hence a strong increase of the resistivity, was observed at higher annealing temperatures

PY - 2007 SP - 5264 EP - 5269 T2 - Thin Solid Films TI - Physical properties of erbium implanted tungsten oxide films deposited by reactive dual magnetron sputtering VL - 515 ER -