@article{33995,
  author = {Ramamoorthy Ramesh and K Luther and B Wilkens and D.L Hart and E Wang and J.M Tarascon and A Inam and X.D Wu and T Venkatesan},
  title = {Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition},
  abstract = {Epitaxial thin films of ferroelectric bismuth titanate Bi 4Ti3O12 have been grown by pulsed laser deposition on single-crystal [100] SrTiO3 substrates. Bismuth titanate has a high Curie temperature (675°C) and saturation polarization values of 4 and 50 μC/cm2 along the c and b axis, respectively. Its a,b lattice parameters allow thin-film growth on substrates such as SrTiO3, LaAlO3, MgO, etc. These single crystalline films exhibit good quality as evidenced by x-ray diffraction, Rutherford backscattering, and transmission electron microscopy. Applications for these films include memory devices and optical displays.},
  year = {1990},
  journal = {Applied Physics Letters},
  volume = {57},
  number = {15},
  pages = {1505-1507},
  issn = {00036951},
  doi = {10.1063/1.104128},
  note = {cited By 115},
  language = {eng},
}