@article{33990,
  author = {T Sands and J.P Harbison and M.L Leadbeater and S.J Allen Jr and G.W Hull and Ramamoorthy Ramesh and V.G Keramidas},
  title = {Epitaxial ferromagnetic τ-MnAl films on GaAs},
  abstract = {We report the growth of epitaxial τ-MnAl ferromagnetic films on GaAs substrates by molecular beam epitaxy (MBE). Reflection high-energy electron diffraction and x-ray diffraction show that the τ-phase films grow with the c axis of the tetragonal unit cell normal to the 100GaAs substrate surface. In the bulk, τ-MnAl is a metastable ferromagnetic phase with uniaxial magnetocrystalline anisotropy. The large hysteresis observed in the Hall resistance versus applied magnetic field suggests that the easy magnetization direction is indeed parallel to the c axis in the MBE-grown films. The growth of these ferromagnetic films with perpendicular magnetization on compound semiconductor substrates creates the possibility of novel devices that combine magnetic memory and magneto-optic functions with semiconductor electronics and photonics.},
  year = {1990},
  journal = {Applied Physics Letters},
  volume = {57},
  number = {24},
  pages = {2609-2611},
  issn = {00036951},
  doi = {10.1063/1.103826},
  note = {cited By 89},
  language = {eng},
}