@article{33968,
  author = {J.B Barner and C.T Rogers and A Inam and Ramamoorthy Ramesh and S Bersey},
  title = {All a-axis oriented YBa2Cu3O7-y-PrBa 2Cu3O7-z-YBa2Cu3O 7-y Josephson devices operating at 80 K},
  abstract = {We have demonstrated the controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O7-y-PrBa 2Cu3O7-z-YBa2Cu3O 7-y trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O7-z barrier layer. Critical current densities in excess of 104 A/cm2 have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.},
  year = {1991},
  journal = {Applied Physics Letters},
  volume = {59},
  number = {6},
  pages = {742-744},
  issn = {00036951},
  doi = {10.1063/1.105330},
  note = {cited By 150},
  language = {eng},
}