@inproceedings{33952,
  keywords = {Reliability, Thin films, Heterostructures, Ferroelectric materials, Ferroelectric devices, Capacitors, Lead zirconate titanate (PZT), Semiconducting silicon, Lanthanum strontium cobalt oxide, Aging characteristics, Fatigue characteristics, Reliability testing},
  author = {Ramamoorthy Ramesh and T Sands and V.G Keramidas and D.K Fork and Tuttle Bruce A and Desu Seshu B and Larsen Poul K},
  editor = {Myers R},
  title = {Ferroelectric La-Sr-Co-O/Pb-Zr-Ti-O/La-Sr-Co-O heterostructures on silicon: reliability testing},
  abstract = {<p>We report results of pulsed electrical testing of ferroelectric Pb0.9La0.1Zr0.2Ti0.8O3 thin film capacitors with symmetrical La-Sr-Co-O top and bottom electrodes at room temperatures and at 100°C. They have been grown on (001) Si with a Yttria stabilized zirconia (YSZ) buffer layer. A layered perovskite 'template' layer (200-300A thick), grown between the YSZ buffer layer and bottom La-Sr-Co-O electrode, is critical for obtaining the required orientation of the subsequent layers. When compared to the capacitors grown with Y-Ba-Cu-O (YBCO) top and bottom electrodes, these structures posses two advantages : (1) the growth temperatures are lower by 60-150DGRC; (ii) the capacitors show a large remnant polarization, AP, (ΔP = switched polarization- non-switched polarization), 25-30 μC/cm2, for an applied voltage of only 2V (applied field of 70 kV/cm). The fatigue, retention and aging characteristics of these new structures are excellent at both room temperature and at 100°C.</p>},
  year = {1993},
  journal = {Materials Research Society Symposium - Proceedings},
  volume = {310},
  pages = {195-200},
  publisher = {Publ by Materials Research Society, Pittsburgh, PA, United States},
  issn = {02729172},
  note = {<p>cited By 15</p>},
  language = {eng},
}