@article{33924,
  keywords = {Optimization, Microstructure, Thin films, Sputter deposition, Electrodes, Hysteresis, Lanthanum compounds, Doping (additives), Lead compounds, Capacitors, Lead zirconate titanate (PZT), Fatigue of materials, Imprint behavior, Fatigue performance, High density nonvolatile memory (HDNVM), Hysteresis loop characteristics, Oxide electrode technology},
  author = {B.A Tuttle and H.N Al-Shareef and W.L Warren and M.V Raymond and T.J Headley and J.A Voigt and J Evans and Ramamoorthy Ramesh},
  title = {La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories},
  abstract = {Oxide electrode technology is investigated for optimization of Pb(Zr,Ti)O3 (PZT) thin film capacitor properties for high density nonvolatile memory applications. PZT thin film capacitors with RF sputter deposited La0.5Sr0.5CoO3 (LSCO) electrodes have been characterized with respect to the following parameters: initial dielectric hysteresis loop characteristics, fatigue performance, microstructure and imprint behavior. Our studies have determined that the fatigue of PZT capacitors with LSCO electrodes is less sensitive to B site cation ratio and underlying electrode stack technology than with RuO2 electrodes. Doping PZT thin films with Nb (PNZT) improves imprint behavior of LSCO//PZT//LSCO capacitors considerably. We have demonstrated that PNZT 4/30/70 // LSCO capacitors thermally processed at either 550°C or 675°C have almost identical initial hysteresis properties and exhibit essentially no fatigue out to approximately 1010 cycles. © 1995.},
  year = {1995},
  journal = {Microelectronic Engineering},
  volume = {29},
  number = {1-4},
  pages = {223-230},
  issn = {01679317},
  doi = {10.1016/0167-9317(95)00150-6},
  note = {cited By 12},
  language = {eng},
}