@article{33916,
  author = {J.M Benedetto and I.K Lloyd and Ramamoorthy Ramesh},
  title = {The Temperature Dependence of Ferroelectric Imprint},
  abstract = {Unidirectional voltage pulse stressing can induce a significant amount of asymmetry in the retention characteristics in certain LSCO/PLZT/LSCO thin films. A large asymmetry was developed within 1000 s of unidirectional pulsing with a 100-Hz (50% duty cycle) square wave at 125°C while no significant retention asymmetry was developed at 25°C in the same time frame. The change in respective switched and non-switched polarizations after voltage pulse stressing follow an Arrhenius behavior. The thermal activation energies (Ea) derived from the Arrhenius plots are Ea = 0.21 eV for the change in switched polarization and an Ea = 0.56 eV for the change in non-switched polarization. © 1995, Taylor & Francis Group, LLC. All rights reserved.},
  year = {1995},
  journal = {Integrated Ferroelectrics},
  volume = {10},
  number = {1-4},
  pages = {279-288},
  issn = {10584587},
  doi = {10.1080/10584589508012284},
  note = {cited By 13},
  language = {eng},
}