@article{33912,
  author = {W.L Warren and D Dimos and G.E Pike and B.A Tuttle and M.V Raymond and Ramamoorthy Ramesh and J .T Jr},
  title = {Voltage shifts and imprint in ferroelectric capacitors},
  abstract = {Voltage offsets in the polarization-voltage characteristics of Pb(Zr,Ti)O3 capacitors can be induced by either thermal or optical processes. The thermally (optically) induced voltage shift occurs by heating (illuminating) the sample under remanence or a saturating bias. Generally speaking, the thermally induced voltage shifts are greater than those obtained optically; this is attributed to the role of oxygen vacancy-related defect dipoles throughout the film. We find that the inclusion of a dopant element that occupies a portion of the Ti(Zr) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors. This may result because these particular dopants reduce the oxygen vacancy density and, hence, the defect-dipole contribution to the voltage shift.© 1995 American Institute of Physics.},
  year = {1995},
  journal = {Applied Physics Letters},
  volume = {67},
  pages = {866},
  issn = {00036951},
  doi = {10.1063/1.115531},
  note = {cited By 170},
  language = {eng},
}