@article{33888,
  author = {C.-H Chen and V Talyansky and C Kwon and M Rajeswari and R.P Sharma and Ramamoorthy Ramesh and T Venkatesan and J Melngailis and Z Zhang and W.K Chu},
  title = {Ion implantation induced enhancement of magnetoresistance in La0.67Ca0.33MnO3},
  abstract = {Thin films of colossal magnetoresistance (MR) material, La0.67Ca0.33MnO3, were implanted with different doses (1011-1015 ions/cm2) of 200 keV Ar+ ions. The implanted samples were examined by ion channeling and x-ray diffraction techniques. The channeling results clearly showed that the magnitude of the induced lattice disorder did not increase greatly for implantation doses up to 5×1013 ions/cm2. In this low dose implantation regime, the magnetoresistance MR=[R(0)-R(H)]/R(0) increased by 50%, the peak resistivity went up by two orders of magnitude, and the magnetoresistivity peak temperature decreased by 130 K compared to the original, unimplanted sample. For doses ≥5×1013 ions/cm2, the damage was significant and caused the sample to become semiconducting. © 1996 American Institute of Physics.},
  year = {1996},
  journal = {Applied Physics Letters},
  volume = {69},
  number = {20},
  pages = {3089-3091},
  publisher = {American Institute of Physics Inc.},
  issn = {00036951},
  doi = {10.1063/1.117314},
  note = {cited By 41},
  language = {eng},
}