@article{33876,
  keywords = {semiconductor, Article, priority journal, Electron transport, chemical composition, computer memory},
  author = {S Mathews and Ramamoorthy Ramesh and T Venkatesan and J Benedetto},
  title = {Ferroelectric field effect transistor based on epitaxial perovskite heterostructures},
  abstract = {Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be 'tuned' by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.},
  year = {1997},
  journal = {Science},
  volume = {276},
  number = {5310},
  pages = {238-240},
  issn = {00368075},
  doi = {10.1126/science.276.5310.238},
  note = {cited By 491},
  language = {eng},
}