@article{33859,
  author = {Z.W Dong and S.P Pai and Ramamoorthy Ramesh and T Venkatesan and M Johnson and Z.Y Chen and A Cavanaugh and Y.G Zhao and X.L Jiang and R.P Sharma and S Ogale and R.L Greene},
  title = {Novel high-Tc transistors with manganite oxides},
  abstract = {One viable approach for transistor-like high-Tc three terminal devices is the quasiparticle injection device (QPID). We have fabricated Au/YBa2Cu3O7/LaAlO3/Nd 0.7Sr0.3MnO3 (NSMO) and Au/YBa 2Cu3O7/LaAlO3/LaNiO3 (LNO) heterostructures on (100) LaAlO3 substrates by pulsed laser deposition for studies of quasiparticle injection effects in high-Tc superconducting thin films. The effect of the injection of spin-polarized quasiparticles from a ferromagnetic NSMO gate was compared to that of unpolarized quasiparticles from a nonmagnetic metallic LNO gate. A current gain greater than nine has been attained for spin-polarized QPIDs, which is an order of magnitude larger than the gain of spin unpolarized QPIDs. Such large effects could be useful in a variety of active high-Tc/colossal magnetoresistance heterostnicture devices. © 1998 American Institute of Physics.},
  year = {1998},
  journal = {Journal of Applied Physics},
  volume = {83},
  number = {11},
  pages = {6780-6782},
  publisher = {American Institute of Physics Inc.},
  issn = {00218979},
  doi = {10.1063/1.367764},
  note = {cited By 23},
  language = {eng},
}